Pei sze cheng manhole cover
Two more people have died in connection with an unprecedented Legionnaire's disease outbreak in New York City that has now sickened 100 people, killing 10 of them, in the last three weeks, city officials said Thursday, and Gov. Cuomo said the Centers for Disease Control and Prevention is sending a team to the Bronx.
Mayor de Blasio announced the uptick in cases and deaths during a Q&A at an unrelated news briefing, adding another two deaths and three cases to the total announced just a day earlier.
As of Thursday, 100 cases of the disease, a severe, often lethal, form of pneumonia spread through the air, had been reported in the south Bronx since July 10, de Blasio said. That marks 54 new cases since last Wednesday, when health officials first discussed the outbreak.
The cases have been reported primarily in High Bridge, Morrisania, Hunts Point and Mott Haven. Health officials have said those who died were middle-aged and older adults with underlying medical issues.
Legionnaires' disease is caused by exposure to the bacteria Legionella; in most cases, people are exposed to the bacteria by inhaling contaminated aerosols from cooling towers, hot tubs, showers and faucets or drinking water.
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The Health Department tested cooling towers at 17 buildings in the area near the cluster of cases -- five of those tested positive for Legionella, including one at Lincoln Hospital; one at Concourse Plaza; one at a shopping plaza; one at a Verizon office building and one at the Opera House Hotel. All have been decontaminated, and the mayor said earlier this week authorities believed those five sites were the only ones contributing to the outbreak.
All of those sites must submit long-term plans as to how they will maintain cooling towers to protect against any future growth of Legionella. Those plans are due Friday.
Dr. Jennifer Calder, Associate Professor of Public Health Practice at New York Medical College
The family of a woman who was killed after a gas explosion in their Floral Park home says they have been overwhelmed by community’s response.
“I am so touched,” said Dindial Boodram, “by the support and love we are getting from the public.” Boodram’s wife, Ghanwatti, 40 years old, was found dead after a gas explosion leveled their home on April 24.
Con Edison said they received a complaint of an odor of gas on 260th Street in Floral Park that Friday. By 4:15 p.m., a Con Edison worker had discovered there was a gas leak. At 4:50 p.m., as workers lifted a manhole cover to vent some of the gas, the house exploded.
“If they had evacuated the homes, my wife would be here with us,” Boodram has said several times in interviews.
While the utility investigates this fatal incident, the Boodram family has been flooded with donations from neighbors and even strangers who have been so moved by their situation. To help organize these donations, the family has set up a fund at Capital One.
Boodram Family Irrevocable Trust
Capital One Bank
257-03 Hillside Avenue
Floral Park 11004
718-831-5590
Abstract
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.
Field-effect transistors fabricated from carbon nanotubes have been investigated extensively over the past two decades. This study demonstrates a nanotube-based integrated circuit design that substantially improves the speed and power consumption with respect to silicon-based integrated circuits.
Semiconducting carbon nanotubes (CNTs) are considered to be promising channel materials for the next-generation nanoelectronic devices, in particular, for high-performance field-effect transistors (FETs)1,2,3. After approximately 15 years of extensive investigation, significant progress has been made in the fabrication of CNT-based nanoelectronic devices1,2,3, and the physics of the CNT FET has been firmly established4,5,6,7. Both p-type8,9,10,11 and n-type12,13,14,15,16 CNT FETs have been fabricated, displaying outstanding performance approaching the balli .